OBSOLETE
2SD2382
3D CAD DataResin molded silicon power transistor
Features
-
・High DC current gain (Darlington) ・Built-in zener diode between collector and base ・Low saturation voltage between collector and emitter
Application
-
・Power supply
Specifications
| Application | general purpose |
|---|---|
| VCBO | 65 V |
| VCEO | 65 V |
| IC (-) | -6 A |
| IC (+) | 6 A |
| PC | 30.0 W |
| hFE (min.) | 700 |
| hFE (max.) | 3000 |
| hFECondition VCE | 1 V |
| hFECondition IC | 1.0 A |
| VCE(SAT) (max.) | 0.15 V |
| Complimentary | |
| Polarity | NPN |
| Clamp Diode | YES |
| Chip Division | Darlington |
| Package Weight (Typ.) | g |
Physical Dimensions
Questions or Comments?
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