Not Recommended for New Design
FKV550T
3D CAD DataSilicon N-channel MOSFET
Design Support
Related Documents
Features
-
・Low gate input capacitance
・Low gate charge
・High speed switching
Application
-
・For DC-DC converters
Specifications
| VDS | 50 V |
|---|---|
| VGSS | ±20 V |
| ID (－) | -50 A |
| ID (＋) | 50 A |
| ID(PULSE) | A |
| PD | 35.00 W |
| VTH (min.) | 1.00 V |
| VTH (max.) | 2.50 V |
| Ciss | 2700 pF |
| Crss | 500 pF |
| RDS(ON) (typ.) | 10.0 mΩ |
| RDS(ON) (max.) | 13.0 mΩ |
| Polarity | Nch |
| RDS(ON) (typ.) (VGS=4.5V) | mΩ |
| RDS(ON) (max.) (VGS=4.5V) | mΩ |
| Coss | pF |
| Qg | nC |
| Qg(VGS=4.5) | nC |
| trr1 | ns |
| Package Weight (Typ.) | g |
Physical Dimensions
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