Not Recommended for New Design

SSD103

Silicon NPN transistor

Features

    ・Low saturation voltage between collector and emitter
    ・Built-in zener diode between collector and base
    ・High DC current gain

Application

    ・Injector

Specifications

Application general purpose
VCBO 65 V
VCEO 65 V
IC (-) A
IC (+) 6 A
PC 1.5 W
hFE (min.) 400
hFE (max.) 1500
hFECondition VCE 1 V
hFECondition IC 1.0 A
VCE(SAT) (max.) 0.15 V
Complimentary
Polarity NPN
Clamp Diode YES
Chip Division Single
Package Weight (Typ.) g

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