Not Recomended for New Design

EKI10126

Silicon N-Channel MOSFET

Design Support

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 100.00 V
VGSS ±20 V
ID (-) A
ID (+) 66.00 A
ID(PULSE) 132 A
PD 135.00 W
VTH (min.) 1.0 V
VTH (max.) 2.5 V
Ciss 6420.00 pF
Crss 280.00 pF
RDS(ON) (typ.) 8.8000 Ω
RDS(ON) (max.) 12.1000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 9.6 Ω
RDS(ON) (max.) (VGS=4.5V) 12.9 Ω
Coss 465 pF
Qg 95.6 nC
Qg(VGS=4.5) 45.2 nC
trr1 54.6 ns

Remarks

Low Qg MOSFET series
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Block Diagram

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