Not Recomended for New Design

FKI06075

Silicon N-Channel MOSFET

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 60.00 V
VGSS ±20 V
ID (-) A
ID (+) 52.00 A
ID(PULSE) 104 A
PD 40.00 W
VTH (min.) 1.0 V
VTH (max.) 2.5 V
Ciss 3810.00 pF
Crss 215.00 pF
RDS(ON) (typ.) 5.1000 Ω
RDS(ON) (max.) 6.6000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 6.0 Ω
RDS(ON) (max.) (VGS=4.5V) 8.4 Ω
Coss 420 pF
Qg 57.2 nC
Qg(VGS=4.5) 26.9 nC
trr1 40.8 ns

Remarks

Low Qg MOSFET series
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Block Diagram

Physical Dimensions

Physical Dimensions

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