Not Recommended for New Design

GKI07174

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 75 V
VGSS ±20 V
ID (-) A
ID (+) 26 A
ID(PULSE) 51 A
PD 59.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 2520 pF
Crss 115 pF
RDS(ON) (typ.) 10.4 mΩ
RDS(ON) (max.) 14.5 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 12.1 mΩ
RDS(ON) (max.) (VGS=4.5V) 16.7 mΩ
Coss 245 pF
Qg 33.0 nC
Qg(VGS=4.5) 15 nC
trr1 39.0 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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