Sanken Technical Report vol.57
Sanken Technical Report 是三垦电气集团为了推动能源节约型社会发展所研发的最新技术与产品介绍的技术论文。
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2025年11月期号(vol.57)
| No. | Paper Title | Author |
|---|---|---|
| - | Sanken Technical Report vol.57 Comprehensive Edition | |
| 1 | Development of PSJGaN HEMT | Hironori Ito |
| A prototype device development was conducted with utilizing polarization super junction (PSJ) technology originally developed by Powdec Co., Ltd. PSJGaN is expected to increase breakdown voltage and suppress current collapse because the simultaneous presence of positive and negative polarization charges confined in respective double heterojunction interfaces leads to a uniform distribution of the electric field. To verify these effects, prototype fabrication and device evaluation were conducted. Comparative analysis with conventional GaN HEMTs (High Electron Mobility Transistors) revealed superior performance of breakdown voltage and current collapse characteristics. Furthermore, in cascode configuration, PSJGaN demonstrated better switching performance than SJMOS. Based on these results, development toward commercialization of integrated devices of PSJGaN, MOSFET, and control IC will be continued. | ||
| 2 | RISC-V Microcontroller MD6605 for Power Electronics Control | Takanaga Yamazaki Hitomi Shishido |
| Sanken Electric has developed the microcontroller MD6605 for advanced power electronics control systems such as power supplies and motors. MD6605 is built on a cutting-edge 22nm ultra-low-leakage process and incorporates a RISC-V CPU core along with non-volatile ReRAM memory. In addition to the RISC-V CPU core, MD6605 features a heterogeneous multi-core architecture consisting of a DSP for digital filter computation and an EPU (Event Processing Unit) capable of high-speed task switching, enabling high efficiency and functionality in power electronics control systems. Sanken Electric plans to actively deploy products utilizing MD6605 for various power electronics control applications. | ||
| 3 | Development of MOSFET Module SAM4L10M30Z1 for 48V Automotive | Seiji Suzuki |
| In recent years, the electrification of automobiles has led to the development of various powertrains. Among them, 48V mild hybrid electric vehicles (48V MHEVs), which are in high demand particularly in Europe, have attracted attention. Sanken Electric (hereinafter referred to as “the Company”) has developed a 100V low-voltage three-phase MOSFET module, SAM- 4L10M30Z1, designed for use in electric compressors installed in 48V MHEVs. To achieve both the required performance and compact packaging, it is essential to reduce the on-resistance of the MOSFET and optimize the module’s package structure. This paper introduces the performance and development status of this product, which is currently under development. | ||
| 4 | Development of Power Devices for Automotive 1200V IPM Series | Takaaki Ishii Hayato Yamada |
| We have developed the SAM2 series of intelligent power modules (IPMs), which integrate power devices, control ICs equipped with drive and protection functions, and temperature-sensing thermistors within a transfer-molded package. These modules contribute to the miniaturization and improved energy efficiency of inverter units used for motor control in automotive and industrial air-conditioning systems. To address increasingly diverse market requirements, we are expanding our product lineup to include devices rated at 1200 V. This paper presents newly developed 1200V power devices intended for automotive applications and the corresponding SAM2 modules that incorporate these devices, designed specifically for electric water-pump driver systems. | ||
| 5 | High-Speed Driving and Short-Circuit-Free Protection Technology for Smart SiC-IC | Kaito Yokoi Osamu Machida |
| SiC-MOSFETs offer high breakdown voltage and compact size, enabling high-current and high-speed switching in high-voltage circuits. In particular, using a gate-source terminal that does not carry main current allows for low-inductance gate control, achieving fast switching. However, when a short circuit occurs during high-voltage switching, SiC-MOSFETs experience extremely fast short-circuit currents of several thousand A/μs, leading to device failure in less than 1μs. When applying conventional 3-terminal (3P) driving, as used in Si-IGBTs, to SiC-MOSFETs, switching speed significantly decreases, but short-circuit current is limited, extending the short-circuit withstand time by several times. This study developed a driving method that combines the fast switching of 4-terminal (4P) driving with the short-circuit protection of 3P driving. | ||
| 6 | Development of Infrared Chip LED with Backside Light Leakage Suppression | Kosaku Noda |
| Due to the recent trend toward miniaturization of electronic devices, backside light leakage from infrared chip LEDs has become a significant issue. In this development, we successfully suppressed backside light leakage by changing the substrate material of the infrared chip LED to one with lower infrared transmittance. The newly developed infrared chip LED maintains compatibility with existing products in terms of external dimensions and mounting land patterns, eliminating the need for circuit board design changes on the user side. This paper reports on the characteristics and features of the developed LED. | ||
| 7 | Development of RGB-LEDs Using RGB Phosphors | Yousuke Umetsu |
| RGB-LEDs are widely used for indirect lighting in vehicle interiors. However, conventional methods that directly utilize the emission from RGB chips suffer from significant color variation in both primary and mixed colors. In this study, we addressed this issue by applying phosphors corresponding to each RGB color to suppress color variation. Additionally, we improved temperature characteristics and brightness degradation under high current conditions, enabling the development of high-power RGB-LEDs. This paper introduces the details of the development. | ||
| 8 | Development of Non-Isolated Converter Power Supply IC STR5M400 Series | Koichi Ito Koichi Shiotsu Akira Hayakawa |
| In recent years, power supply ICs used in small home appliances such as ceiling fans, coffee makers, dehumidifiers/humidifiers, and vacuum cleaners have required surface-mount miniaturization, elimination of photocouplers through non-isolation, reduction of external components, and high efficiency across the entire load range. To meet these demands, we have developed the STR5M400 series, which is reported in this paper. | ||
| 9 | Development of Non-Isolated Flyback Power Supply IC STR5A300 Series | Tetsuya Tabata Koichi Shiotsu Akira Hayakawa |
| This report describes the development of a power supply IC designed for low-capacity power sources used in white goods such as air conditioners, washing machines, and air purifiers, as well as smart meters. For these applications, cost reduction and space-saving in the power system are critical requirements, and further miniaturization is expected in the future. The newly developed IC integrates a high-voltage (900V) power MOSFET and an internal error amplifier, targeting non-isolated power supply applications. This report outlines the key features of the IC, compares circuit topologies, and presents the characteristics of a power board equipped with the IC. | ||
| 10 | Generalized Performance Board Design for Docking Interfaces | Shougo Kimura Asami Sanao |
| Our company handles power semiconductors such as Intelligent Power Modules (IPMs) and power management ICs. In wafer testing, which is one of the front-end processes in semiconductor manufacturing, continuous improvement in quality and throughput is required. To enhance throughput, we utilize the multi-site measurement function of Automated Test Equipment (ATE) and probers, which enables testing of multiple chips at once. As the number of chips tested in multi-site configurations increases, components such as performance boards and probe cards tend to become larger. Manufacturing these large components for each product individually leads to increased costs. To suppress these costs, we designed generalized components. This paper reports on the design case of such generalized performance boards. | ||