OBSOLETE
SKI10123
Package : TO263-2L
RoHS : YES
Silicon N-Channel MOSFET
Data Download
Design Support
- Technical Documents
Features
-
・Low total gate charge, low on-resistance
・High speed switching
・Capable of 4.6V gate drive
Application
・DC-DC converters・Synchronous Rectification
Specifications
| VDS | 100 V |
|---|---|
| VGSS | ±20 V |
| ID (－) | |
| ID (＋) | 66 A |
| ID(PULSE) | 132 A |
| PD | 135.00 W |
| VTH (min.) | 1.00 V |
| VTH (max.) | 2.50 V |
| Ciss | 6420 pF |
| Crss | 280 pF |
| RDS(ON) (typ.) | 8.8 mΩ |
| RDS(ON) (max.) | 12.1 mΩ |
| Polarity | Nch |
| RDS(ON) (typ.) (VGS=4.5V) | 9.6 mΩ |
| RDS(ON) (max.) (VGS=4.5V) | 12.9 mΩ |
| Coss | 465 pF |
| Qg | 95.6 nC |
| Qg(VGS=4.5) | 45.2 nC |
| trr1 | 54.6 ns |
| Package Weight (Typ.) | |
| Automotive Qualified | NO |
Physical Dimensions
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