OBSOLETE
FGF65A4H
FGF65A4H is a 650 V Field Stop IGBT.
Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.
Thus, Field Stop IGBTs can improve the efficiency of your circuit.
Design Support
Related Documents
Features
-
・Low Saturation Voltage
・High Speed Switching
・With Integrated Fast Recovery Diode
・RoHS Compliant
Application
-
・Welding Converters
・PFC circuit
Specifications
VCES | 650 V |
---|---|
IC | 20 A |
PD | 72 W |
VCE(SAT) (typ.) | 1.90 V |
VCE(SAT) (max.) | 2.40 V |
Qg | 75.00 nC |
Polarity | NPN |
Integrated Diode | YES |
VF | 1.8 V |
trr | 50.00 ns |
Package Weight (Typ.) | g |
Automotive Qualified | NO |
Remarks
650V Field Stop IGBTsSuffix
H: High speed
L: Low saturation voltage
Physical Dimensions
Questions or Comments?
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