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2SK2701A

Silicon N-channel MOSFET

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Features

    ・High voltage product
    ・Low gate input capacitance
    ・High speed switching

Application

    ・Switching regulator

Specifications

VDS 450.00 V
VGSS ±30 V
ID (-) -7.00 A
ID (+) 7.00 A
ID(PULSE) A
PD 35.00 W
VTH (min.) 2.0 V
VTH (max.) 4.0 V
Ciss 720.00 pF
Crss 62.00 pF
RDS(ON) (typ.) 840.0000 Ω
RDS(ON) (max.) 1100.0000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) Ω
RDS(ON) (max.) (VGS=4.5V) Ω
Coss pF
Qg nC
Qg(VGS=4.5) nC
trr1 ns

Block Diagram

Physical Dimensions

Physical Dimensions

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