Not Recommended for New Design

DKI04103

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 40 V
VGSS ±20 V
ID (-) A
ID (+) 29 A
ID(PULSE) 58 A
PD 32.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 990 pF
Crss 71 pF
RDS(ON) (typ.) 9.5 mΩ
RDS(ON) (max.) 11.8 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 12.7 mΩ
RDS(ON) (max.) (VGS=4.5V) 16.8 mΩ
Coss 180 pF
Qg 13.3 nC
Qg(VGS=4.5) 5.1 nC
trr1 25.1 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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