Not Recommended for New Design

DKI06261

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 60 V
VGSS ±20 V
ID (-) A
ID (+) 25 A
ID(PULSE) 50 A
PD 32.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 1050 pF
Crss 53 pF
RDS(ON) (typ.) 16.7 mΩ
RDS(ON) (max.) 21.9 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 20.6 mΩ
RDS(ON) (max.) (VGS=4.5V) 27 mΩ
Coss 125 pF
Qg 14.7 nC
Qg(VGS=4.5) 6.6 nC
trr1 28.7 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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