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DKI10526

Silicon N-Channel MOSFET

Design Support

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 100.00 V
VGSS ±20 V
ID (-) A
ID (+) 19.00 A
ID(PULSE) 37 A
PD 37.00 W
VTH (min.) 1.0 V
VTH (max.) 2.5 V
Ciss 1530.00 pF
Crss 51.00 pF
RDS(ON) (typ.) 34.4000 Ω
RDS(ON) (max.) 54.2000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 36.3 Ω
RDS(ON) (max.) (VGS=4.5V) 56.2 Ω
Coss 125 pF
Qg 19.9 nC
Qg(VGS=4.5) 9.0 nC
trr1 40.7 ns

Remarks

Low Qg MOSFET series
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Block Diagram

Physical Dimensions

Physical Dimensions

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