Not Recommended for New Design

EKI06108

Silicon N-Channel MOSFET

Design Support

Related Documents

■Other

See More

Close

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 60 V
VGSS ±20 V
ID (-) A
ID (+) 57 A
ID(PULSE) 114 A
PD 90.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 2520 pF
Crss 135 pF
RDS(ON) (typ.) 7.0 mΩ
RDS(ON) (max.) 9.2 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 8.6 mΩ
RDS(ON) (max.) (VGS=4.5V) 11.2 mΩ
Coss 280 pF
Qg 36.2 nC
Qg(VGS=4.5) 16.9 nC
trr1 34.8 ns

Remarks

Low Qg MOSFET series
Click here to see product details and full lineup.

Physical Dimensions

Physical Dimensions

Questions or Comments?

Please feel free to contact us if you cannot find the desired product from the lineup.