Not Recomended for New Design

EKI10198

Silicon N-Channel MOSFET

Design Support

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 100.00 V
VGSS ±20 V
ID (-) A
ID (+) 47.00 A
ID(PULSE) 94 A
PD 116.00 W
VTH (min.) 1.0 V
VTH (max.) 2.5 V
Ciss 3990.00 pF
Crss 160.00 pF
RDS(ON) (typ.) 13.2000 Ω
RDS(ON) (max.) 18.4000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 14.0 Ω
RDS(ON) (max.) (VGS=4.5V) 19.3 Ω
Coss 300 pF
Qg 57.7 nC
Qg(VGS=4.5) 27.1 nC
trr1 49.2 ns

Remarks

Low Qg MOSFET series
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Block Diagram

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