Not Recommended for New Design

EKI10198

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 100 V
VGSS ±20 V
ID (-) A
ID (+) 47 A
ID(PULSE) 94 A
PD 116.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 3990 pF
Crss 160 pF
RDS(ON) (typ.) 13.2 mΩ
RDS(ON) (max.) 18.4 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 14 mΩ
RDS(ON) (max.) (VGS=4.5V) 19.3 mΩ
Coss 300 pF
Qg 57.7 nC
Qg(VGS=4.5) 27.1 nC
trr1 49.2 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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