Not Recommended for New Design

FKI07117

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 75 V
VGSS ±20 V
ID (-) A
ID (+) 42 A
ID(PULSE) 83 A
PD 40.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 4040 pF
Crss 215 pF
RDS(ON) (typ.) 7.2 mΩ
RDS(ON) (max.) 9.7 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 8.2 mΩ
RDS(ON) (max.) (VGS=4.5V) 11.2 mΩ
Coss 370 pF
Qg 54.0 nC
Qg(VGS=4.5) 25 nC
trr1 44.3 ns

Remarks

Low Qg MOSFET series
Click here to see product details and full lineup.

Physical Dimensions

Physical Dimensions

Questions or Comments?

Please feel free to contact us if you cannot find the desired product from the lineup.