Not Recommended for New Design

FKI10126

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 100 V
VGSS ±20 V
ID (-) A
ID (+) 41 A
ID(PULSE) 82 A
PD 42.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 6420 pF
Crss 280 pF
RDS(ON) (typ.) 8.8 mΩ
RDS(ON) (max.) 12.1 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 9.6 mΩ
RDS(ON) (max.) (VGS=4.5V) 12.9 mΩ
Coss 465 pF
Qg 95.6 nC
Qg(VGS=4.5) 45.2 nC
trr1 54.6 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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