ACTIVE

FKV550N

50V, 50A
Silicon N-channel MOSFET with gate protection diode

Features

    ・High Current
    ・Low RDS(ON)

Application

    ・DC-DC Converters
    lSyncronous Rectification

Specifications

VDS 50 V
VGSS ±20 V
ID (-) A
ID (+) 50 A
ID(PULSE) 150 A
PD 35.00 W
VTH (min.) 3.00 V
VTH (max.) 4.20 V
Ciss 2000 pF
Crss 500 pF
RDS(ON) (typ.) 12.0 mΩ
RDS(ON) (max.) 15.0 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V)
RDS(ON) (max.) (VGS=4.5V)
Coss 1200 pF
Qg nC
Qg(VGS=4.5) nC
trr1 ns

Physical Dimensions

Physical Dimensions

Questions or Comments?

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