Not Recommended for New Design

GKI03026

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 30 V
VGSS ±20 V
ID (-) A
ID (+) 40 A
ID(PULSE) 80 A
PD 77.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 4010 pF
Crss 580 pF
RDS(ON) (typ.) 2.2 mΩ
RDS(ON) (max.) 3.0 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 2.9 mΩ
RDS(ON) (max.) (VGS=4.5V) 4.4 mΩ
Coss 945 pF
Qg 55.8 nC
Qg(VGS=4.5) 25.8 nC
trr1 38.7 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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