ACTIVE

GKI04031

Silicon N-Channel MOSFET

Design Support

Related Documents

■3D CAD Data
■Other

See More

Close

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 40.00 V
VGSS ±20 V
ID (-) A
ID (+) 40.00 A
ID(PULSE) 80 A
PD 77.00 W
VTH (min.) 1.0 V
VTH (max.) 2.5 V
Ciss 3910.00 pF
Crss 360.00 pF
RDS(ON) (typ.) 2.9000 Ω
RDS(ON) (max.) 3.9000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 3.7 Ω
RDS(ON) (max.) (VGS=4.5V) 5.5 Ω
Coss 620 pF
Qg 56.1 nC
Qg(VGS=4.5) 26.4 nC
trr1 38.7 ns

Remarks

Low Qg MOSFET series
Click here to see product details and full lineup.

Block Diagram

Questions or Comments?

Please feel free to contact us if you cannot find the desired product from the lineup.