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GKI06185

Silicon N-Channel MOSFET

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 60.00 V
VGSS ±20 V
ID (-) A
ID (+) 26.00 A
ID(PULSE) 51 A
PD 46.00 W
VTH (min.) 1.0 V
VTH (max.) 2.5 V
Ciss 1510.00 pF
Crss 77.00 pF
RDS(ON) (typ.) 11.8000 Ω
RDS(ON) (max.) 16.3000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 14.4 Ω
RDS(ON) (max.) (VGS=4.5V) 21.1 Ω
Coss 175 pF
Qg 19.8 nC
Qg(VGS=4.5) 9.1 nC
trr1 31.2 ns

Remarks

Low Qg MOSFET series
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Block Diagram

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