ACTIVE

GKI10301

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 100 V
VGSS ±20 V
ID (-) A
ID (+) 26 A
ID(PULSE) 51 A
PD 59.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 2540 pF
Crss 88 pF
RDS(ON) (typ.) 20.2 mΩ
RDS(ON) (max.) 29.8 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 21.6 mΩ
RDS(ON) (max.) (VGS=4.5V) 31.2 mΩ
Coss 195 pF
Qg 36.5 nC
Qg(VGS=4.5) 16.9 nC
trr1 44.6 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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