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SKI03021

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Package:TO263

Silicon N-Channel MOSFET

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 30.00 V
VGSS ±20 V
ID (-) A
ID (+) 85.00 A
ID(PULSE) 170 A
PD 135.00 W
VTH (min.) 1.0 V
VTH (max.) 2.5 V
Ciss 6200.00 pF
Crss 920.00 pF
RDS(ON) (typ.) 2.1000 Ω
RDS(ON) (max.) 2.6000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 2.5 Ω
RDS(ON) (max.) (VGS=4.5V) 3.3 Ω
Coss 1430 pF
Qg 91.1 nC
Qg(VGS=4.5) 42.3 nC
trr1 43.9 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

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