OBSOLETE

SKI04044

Package Image

Package:TO263-2L

Silicon N-Channel MOSFET

Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

    ・DC-DC converters
    ・Synchronous Rectification

Specifications

VDS 40 V
VGSS ±20 V
ID (-) A
ID (+) 80 A
ID(PULSE) 161 A
PD 90.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 2410 pF
Crss 190 pF
RDS(ON) (typ.) 4.1 mΩ
RDS(ON) (max.) 5.2 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 5.4 mΩ
RDS(ON) (max.) (VGS=4.5V) 7 mΩ
Coss 395 pF
Qg 35.0 nC
Qg(VGS=4.5) 16 nC
trr1 32.9 ns

Remarks

Low Qg MOSFET series
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Physical Dimensions

Physical Dimensions

Questions or Comments?

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