OBSOLETE

GKI06185

Package Image

Package : DFN5x6

RoHS : YES

Silicon N-Channel MOSFET

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

・DC-DC converters
・Synchronous Rectification

Specifications

VDS 60 V
VGSS ±20 V
ID (-)
ID (+) 26 A
ID(PULSE) 51 A
PD 46.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 1510 pF
Crss 77 pF
RDS(ON) (typ.) 11.8 mΩ
RDS(ON) (max.) 16.3 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 14.4 mΩ
RDS(ON) (max.) (VGS=4.5V) 21.1 mΩ
Coss 175 pF
Qg 19.8 nC
Qg(VGS=4.5) 9.1 nC
trr1 31.2 ns
Package Weight (Typ.)
Automotive Qualified NO

Physical Dimensions

Physical Dimensions

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