OBSOLETE

SKI03036

Package Image

Package : TO263-2L

RoHS : YES

Silicon N-Channel MOSFET

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Features

    ・Low total gate charge, low on-resistance
    ・High speed switching
    ・Capable of 4.6V gate drive

Application

・DC-DC converters
・Synchronous Rectification

Specifications

VDS 30 V
VGSS ±20 V
ID (-)
ID (+) 80 A
ID(PULSE) 161 A
PD 90.00 W
VTH (min.) 1.00 V
VTH (max.) 2.50 V
Ciss 2460 pF
Crss 300 pF
RDS(ON) (typ.) 3.2 mΩ
RDS(ON) (max.) 3.9 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) 4.3 mΩ
RDS(ON) (max.) (VGS=4.5V) 5.6 mΩ
Coss 590 pF
Qg 36.1 nC
Qg(VGS=4.5) 16.5 nC
trr1 32.9 ns
Package Weight (Typ.)
Automotive Qualified NO

Physical Dimensions

Physical Dimensions

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