ACTIVE

2SK2803

Silicon N-channel MOSFET

Features

    ・High voltage product
    ・Low gate input capacitance
    ・High speed switching

Application

    ・Switching regulator

Specifications

VDS 450 V
VGSS ±30 V
ID (-) -3 A
ID (+) 3 A
ID(PULSE) A
PD 30.00 W
VTH (min.) 2.00 V
VTH (max.) 4.00 V
Ciss 340 pF
Crss 26 pF
RDS(ON) (typ.) 2100.0 mΩ
RDS(ON) (max.) 2800.0 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V)
RDS(ON) (max.) (VGS=4.5V)
Coss pF
Qg nC
Qg(VGS=4.5) nC
trr1 ns

Physical Dimensions

Physical Dimensions

Questions or Comments?

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