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EKV550

Silicon N-channel MOSFET

Design Support

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Features

    ・Low gate input capacitance
    ・Low gate charge
    ・High speed switching

Application

    ・For DC-DC converters

Specifications

VDS 50.00 V
VGSS ±20 V
ID (-) -50.00 A
ID (+) 50.00 A
ID(PULSE) A
PD 85.00 W
VTH (min.) 3.0 V
VTH (max.) 4.2 V
Ciss 2000.00 pF
Crss 500.00 pF
RDS(ON) (typ.) 12.0000 Ω
RDS(ON) (max.) 15.0000 Ω
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V) Ω
RDS(ON) (max.) (VGS=4.5V) Ω
Coss pF
Qg nC
Qg(VGS=4.5) nC
trr1 ns

Block Diagram

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