Not Recommended for New Design

EKV550

Silicon N-channel MOSFET

Features

    ・Low gate input capacitance
    ・Low gate charge
    ・High speed switching

Application

    ・For DC-DC converters

Specifications

VDS 50 V
VGSS ±20 V
ID (-) -50 A
ID (+) 50 A
ID(PULSE) A
PD 85.00 W
VTH (min.) 3.00 V
VTH (max.) 4.20 V
Ciss 2000 pF
Crss 500 pF
RDS(ON) (typ.) 12.0 mΩ
RDS(ON) (max.) 15.0 mΩ
Polarity Nch
RDS(ON) (typ.) (VGS=4.5V)
RDS(ON) (max.) (VGS=4.5V)
Coss pF
Qg nC
Qg(VGS=4.5) nC
trr1 ns

Physical Dimensions

Physical Dimensions

Questions or Comments?

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