OBSOLETE

MN611S

Package Image

Package:TO220S-2L

Silicon NPN transistor

Features

    ・Low saturation voltage between collector and emitter
    ・Built-in zener diode between collector and base

Application

    ・Injector

Specifications

Application general purpose
VCBO 115 V
VCEO 115 V
IC (-) -6 A
IC (+) 6 A
PC 50.0 W
hFE (min.) 400
hFE (max.) 1500
hFECondition VCE 1 V
hFECondition IC 0.5 A
VCE(SAT) (max.) 0.12 V
Complimentary
Polarity NPN
Clamp Diode YES
Chip Division Single
Package Weight (Typ.) g

Physical Dimensions

Physical Dimensions

Questions or Comments?

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